发明名称 PLASMA PROCESS SYSTEM
摘要 The present invention relates to a plasma processing system. The plasma processing system according to the present invention comprises: an equipment front end module having a carrier on which a plurality of substrates are stacked; a first transfer chamber connected to the equipment front end module and having a first substrate conveying device for conveying the substrates; a loadlock chamber connected to the first transfer chamber; a cleaning chamber stacked on or under the loadlock chamber for cleaning a plasma-processed substrate using a cleaning solution; a second transfer chamber connected to the loadlock chamber and the cleaning chamber and including a second substrate conveying device for conveying the substrate; and one or more process chambers connected to the second transfer chamber and comprises a substrate support mount on which a substrate to be processed is placed, an upper electrode installed to correspond to the substrate support mount, and an edge plasma generating unit formed in an annular shape along an outer side of the upper electrode. According to the plasma processing system of the present invention, the substrate to be processed can be processed uniformly by using plasma divided into central and edge areas in the process chamber. Also, plasma is generated independently in the central or edge region, such that the substrate to be processed is selectively processed. Further, plural substrates processed in a plurality of process chamber can be successively processed without standby times by using the cleaning chamber.
申请公布号 KR20140115398(A) 申请公布日期 2014.10.01
申请号 KR20130016092 申请日期 2013.02.15
申请人 CHOI, DAI KYU 发明人 CHOI, DAI KYU
分类号 H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/205
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