| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laminate structure (such as a thin film capacitor) and a method for manufacturing the same, capable of using a conductive material with a low melting point as an electrode material and improving characteristics of a dielectric layer.SOLUTION: A method for manufacturing a laminate structure comprises a step (a), a step (b), a step (c), and a step (d). The step (a) includes forming a deposition layer serving as a dielectric layer 2 on a base material composed of a conductive material having a higher melting point than a conductive material used to form a second electrode layer 12. The step (b) is performed after the step (a), and includes forming a dielectric layer 2 from the deposition layer by thermally processing the deposition layer. The step (c) is performed after the step (b), and includes forming a first electrode layer 11 on the dielectric layer 2. The step (d) is performed after the step (b), and includes forming a second electrode layer 12 on a ground layer 3 using the base material as the ground layer 3.</p> |
