SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A method of manufacturing a semiconductor device includes forming a device isolation layer in the upper part of a substrate, and defining first active regions and second active regions which are alternately arranged. Multiple gate structures including a gate electrode which is extended in a first direction are formed in the upper part of the substrate. Multiple first bit lines, which are extended in a second direction vertical to the first direction and are adjacent to the first active regions, are formed on the substrate. A first interlayer dielectric film, which covers the first bit lines, is formed on the substrate. Multiple second bit lines, which are adjacent to the second active regions and are extended in the second direction, are formed on the first interlayer dielectric film.