Method of forming polysilicon layer and method of manufacturing thin film transistor using the polysilicon layer

摘要

In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation.

主权项

1. A method of forming a polysilicon (poly-Si) layer, the method comprising:
forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation.