发明名称 |
Chemical Vapor Deposition of Graphene Using a Solid Carbon Source |
摘要 |
Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene. |
申请公布号 |
US2014272136(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313845085 |
申请日期 |
2013.03.18 |
申请人 |
Li Xuesong |
发明人 |
Li Xuesong |
分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a film on a substrate, the method comprising the steps of:
placing the substrate into a reactor; placing a solid carbon source into the reactor; and heating both the substrate and the solid carbon source in the reactor; wherein the film comprises graphene. |
地址 |
Wappingers Falls NY US |