发明名称 Metal Cap Apparatus and Method
摘要 Presented herein is a method for electrolessly forming a metal cap in a via opening, comprising bringing a via into contact with metal solution, the via disposed in an opening in a substrate, and forming a metal cap in the opening and in contact with the via, the metal cap formed by an electroless chemical reaction. A metal solution may be applied to the via to form the metal cap. The metal solution may comprises at least cobalt and the cap may comprise at least cobalt, and may optionally further comprise tungsten, and wherein the forming the cap comprises forming the cap to further comprise at least tungsten. The metal solution may further comprise at least hypophosphite or dimethlyaminoborane.
申请公布号 US2014264920(A1) 申请公布日期 2014.09.18
申请号 US201313849608 申请日期 2013.03.25
申请人 Company, Ltd. Taiwan Semiconductor Manufacturing 发明人 Yang Liang-Yueh Ou;Chang Chih-Yi;Kao Chen-Yuan;Su Hung-Wen
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of forming a metal layer, comprising: bringing a via into contact with metal solution, the via disposed in an opening in a substrate; and forming a metal cap in the opening and in contact with the via, the metal cap formed by an electroless chemical reaction.
地址 US