PLASMA PROCESSING APPARATUS AND PLASMA ETCHING APPARATUS

摘要

Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

主权项

1. A plasma processing apparatus which processes a substrate by generating plasma from a processing gas introduced in a processing container, the plasma processing apparatus comprising:
a central introduction unit which introduces the processing gas onto a center portion of the substrate received in the processing container; a peripheral introduction unit which introduces the processing gas onto a peripheral portion of the substrate received in the processing container; a splitter which variably adjusts flow rates of the processing gas supplied to the central introduction unit and the peripheral introduction unit; and a controller which controls the splitter, wherein the controller controls the splitter to change a ratio between an introducing amount of the processing gas from the central introduction unit and an introducing amount of the processing gas from the peripheral introduction unit during the plasma process.