发明名称 |
NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE |
摘要 |
A standard sample (72) that is a nanometer standard prototype has a standard length that serves as a length reference. The standard sample (72) includes a SiC layer in which a step-terrace structure is formed. The height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. The height of the step is used as the standard length. In a microscope such as an STM that is to be measured in a high-temperature vacuum environment, performing heating in a vacuum furnace provided in the STM enables a surface reconstruction to occur while removing a natural oxide film from the surface. The surface reconstruction has an ordered atomic arrangement. Therefore, the accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved. |
申请公布号 |
EP2778649(A1) |
申请公布日期 |
2014.09.17 |
申请号 |
EP20110875382 |
申请日期 |
2011.11.11 |
申请人 |
KWANSEI GAKUIN EDUCATIONAL FOUNDATION |
发明人 |
KANEKO, TADAAKI;USHIO, SHOJI |
分类号 |
G01Q40/02;C30B29/36;C30B33/12 |
主分类号 |
G01Q40/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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