Lateral epitaxial grown SOI in deep trench structures and methods of manufacture

摘要

Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer including a substrate, buried oxide layer (BOX) and silicon (SOI) film. The structure includes a wafer including a substrate, buried insulator layer and a layer of silicon on insulator layer (SOI) having a single crystalline structure throughout the layer. The structure further includes a first plate in the substrate and an insulator layer in direct contact with the first plate. A doped polysilicon is in direct contact with the insulator layer and also in direct contact with the single crystalline structure of the SOI.

主权项

1. A deep trench capacitor structure comprising:
a wafer comprising a substrate, buried insulator layer and a layer of silicon on insulator layer (SOI) having a single crystalline structure throughout the layer; a deep trench structure formed in the wafer and comprising a widened portion formed in the SOI; an epitaxial Si formed in and throughout the widened portion of the deep trench structure, which contacts and has a single crystalline structure that matches the single crystalline structure of the SOI; a first plate formed in the deep trench structure; an insulator layer in contact with the first plate; a doped polysilicon in contact with the insulator layer; and silicide regions formed on the SOI.