Resistive Random Access Memory (RERAM) and Conductive Bridging Random Access Memory (CBRAM) Cross Coupled Fuse and Read Method and System

摘要

By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.

主权项

1. A resistive random access memory comprising first and second resistive memory devices configured as a memory cell and a cross coupled read circuit coupled with the first and second resistive memory devices for reading conductive state values thereof, wherein a one bit value is stored when the first and second resistive memory devices are programmed for different conductive state values.