发明名称 |
Stress enhanced junction engineering for latchup SCR |
摘要 |
A method of forming an IC device including a latchup silicon controlled rectifier (SCR) includes forming a mask on a top surface of a substrate, wherein the mask covers a first portion of the substrate and exposes a second portion of the substrate that is located in one of an n-well and a p-well on the substrate; etching the exposed second portion of the substrate to form an etched area; forming a stress engineered junction of the latchup SCR by selective epitaxial deposition in the etched area; and removing the mask. |
申请公布号 |
GB2509468(B) |
申请公布日期 |
2014.09.10 |
申请号 |
GB20140007431 |
申请日期 |
2012.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOHN B CAMPI;JR. ROBERT J GAUTHIER;JUNJUN LI;RAHUL MISHRA |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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