| 发明名称 | Light-emitting device and method of fabricating the same | ||
| 摘要 | A light-emitting device and a method of fabricating the same, in which the light emission characteristics of the light-emitting device in the UV range are maximized such that a high-efficiency light-emitting device can be produced at low cost. For this, the method includes the step of forming a zinc oxide light-emitting layer on a base substrate, the zinc oxide light-emitting layer including zinc oxide doped with a dopant; and activating the dopant by rapidly heat-treating the zinc oxide light-emitting layer, so that light emission in an ultraviolet range is increased. | ||
| 申请公布号 | US8828766(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201213448629 | 申请日期 | 2012.04.17 |
| 申请人 | Samsung Corning Precision Materials Co., Ltd. | 发明人 | Yoo YoungZo;Kim SeoHyun;Park JeongWoo;Park Taejung;Yoon Gun Sang |
| 分类号 | H01L21/00;H01L33/00;H01L33/34 | 主分类号 | H01L21/00 |
| 代理机构 | Lerner, David, Littenberg, Krumholz & Mentlik, LLP | 代理人 | Lerner, David, Littenberg, Krumholz & Mentlik, LLP |
| 主权项 | 1. A method of fabricating a light-emitting device, comprising: forming a zinc oxide light-emitting layer on a base substrate, the zinc oxide light-emitting layer comprising zinc oxide doped with a dopant; and activating the dopant by rapidly heat-treating the zinc oxide light-emitting layer to increase light emission in an ultraviolet range; wherein the dopant is added in an amount of 4˜7 wt %; wherein the rapidly heat-treating comprises rapid thermal annealing; wherein the rapidly heat-treating is carried out at a temperature ranging from 200° C. to 500° C. for 1 to 5 minutes. | ||
| 地址 | KR | ||