发明名称 Method for manufacturing semiconductor device
摘要 A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.
申请公布号 US8828873(B2) 申请公布日期 2014.09.09
申请号 US201113388626 申请日期 2011.07.19
申请人 Hamamatsu Photonics K.K. 发明人 Shimoi Hideki;Araki Keisuke
分类号 H01L21/302;H01L23/473;B23K26/06;B23K26/00;B23K26/08 主分类号 H01L21/302
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. A method for manufacturing a semiconductor device having a cooling mechanism, the method comprising: a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a first modified region within the object along a line to form a modified region; an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object; and a functional device forming step of forming a functional device on one main face side of the object by performing oxidized film formation, photoresist formation, photolithography, ion injection and conductive part formation on the object to be formed or being formed with the cooling mechanism.
地址 Hamamatsu-shi, Shizuoka JP