发明名称 FORMATION METHOD OF MgZnO-BASED CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method excellent in controllability with a simple apparatus, capable of obtaining a MgZnO-based crystal safely and easily.SOLUTION: A formation method of a MgZnO-based crystal has a step S1 for forming a diffusion auxiliary layer by applying a carbonate as a diffusion auxiliary material on a ZnO crystal, a step S2 for covering the diffusion auxiliary layer with a MgZnO crystal body, and a step S3 for diffusing Mg in the MgZnO crystal body into the ZnO crystal by performing heat treatment of a laminate comprising the ZnO crystal, the diffusion auxiliary layer and the MgZnO crystal body.
申请公布号 JP2014162690(A) 申请公布日期 2014.09.08
申请号 JP20130036103 申请日期 2013.02.26
申请人 STANLEY ELECTRIC CO LTD 发明人 HORIO TADASHI
分类号 C30B29/22;C30B1/10;C30B31/02 主分类号 C30B29/22
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