| 摘要 |
A semiconductor device manufacturing method includes a field oxide insulation film forming step, an electrode forming step, and a resistor forming step. The field oxide insulation film forming step comprises forming a field oxide insulation film on a surface of the semiconductor substrate so that a portion which corresponds to a side surface portion for each of active regions formed on the surface of the semiconductor substrate, which opposes a rotation center of the surface of the semiconductor substrate in spin-coating of a photoresist in the electrode forming step, and which is located at a front side of a centrifugal force acting direction along the surface of the semiconductor substrate has a curved surface that is convex in a forward direction of the centrifugal force along the surface of the semiconductor substrate as seen in plan view of the semiconductor substrate. |
