| 发明名称 | Single-crystal manufacturing apparatus | ||
| 摘要 | The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved. | ||
| 申请公布号 | US8821636(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US200912936450 | 申请日期 | 2009.04.24 |
| 申请人 | Shin-Etsu Handotai Co., Ltd. | 发明人 | Abe Takao;Yokota Kouzou;Mizuishi Kouji |
| 分类号 | C30B15/02;C30B15/14;C30B29/06;C30B15/00;C30B35/00 | 主分类号 | C30B15/02 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A single-crystal manufacturing apparatus based on the Czochralski method having at least a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt contained in the crucible, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are interchangeably placed in the multipurpose chamber respectively. | ||
| 地址 | Tokyo JP | ||