| 发明名称 | Wet soluble lithography | ||
| 摘要 | A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon. | ||
| 申请公布号 | US8822347(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US200912430614 | 申请日期 | 2009.04.27 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wang Chien-Wei;Chang Ching-Yu |
| 分类号 | H01L21/302;H01L21/461 | 主分类号 | H01L21/302 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of forming a wet soluble lithography layer on a substrate, the method comprising: providing the substrate; depositing a first layer comprising a first material on the substrate, the first layer includes silicon; depositing a second layer comprising a second material over the first layer, wherein the first material comprises a different composition than the second material; after depositing the second layer comprising the second material over the first layer, performing an implantation process on the substrate; and performing one of a thermal treatment and a light treatment after performing the implantation process, wherein the one of the thermal treatment and the light treatment changes the solubility of the first layer. | ||
| 地址 | Hsin-Chu TW | ||