Channel Doping Extension beyond Cell Boundaries

摘要

An integrated circuit includes a first and a second standard cell. The first standard cell includes a first gate electrode, and a first channel region underlying the first gate electrode. The first channel region has a first channel doping concentration. The second standard cell includes a second gate electrode, and a second channel region underlying the second gate electrode. The second channel region has a second channel doping concentration. A dummy gate includes a first half and a second half in the first and the second standard cells, respectively. The first half and the second half are at the edges of the first and the second standard cells, respectively, and are abutted to each other. A dummy channel is overlapped by the dummy gate. The dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration.

主权项

1. An integrated circuit comprising:
a first standard cell, wherein the first standard cell comprises:
a first gate electrode;a first channel region underlying the first gate electrode, wherein the first channel region has a first channel doping concentration; anda first half of a dummy gate at a first edge of the first standard cell; a second standard cell abutting the first standard cell, wherein the second standard cell comprises:
a second gate electrode;a second channel region underlying the second gate electrode, wherein the second channel region has a second channel doping concentration; anda second half of the dummy gate at a second edge of the second standard cell, wherein the first half and the second half of the dummy gate are abutted to each other; and a dummy channel overlapped by the dummy gate, wherein the dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration.