| 摘要 |
The present invention relates to a shadow mask (3) formed on a substrate (13) in a process chamber (2) of a CVD-reactor (1) and including a mask body (4). In this case, a vertical temperature gradient is formed at an upper portion of a suscepter (14) supporting at least one substrate (13) in the process chamber. A height extension part (H) of the mask body is significantly smaller than an extension part of a surface thereof and includes at least one window (5). An edge (6) of the window (5) defines an edge (16) of a layer (15) to be deposited on the substrate (13). In particular, in order to improve a growth quality of a layer in a region of edges, the mask body (4) includes layers (7, 8, 9, 10) which vertically overlap with each other in a height extension direction (H). The mask body (4) has less thermal conductivity in the height extension height (H) than in an extension direction of a surface. Further, the present invention relates to the use of a shadow mask. |
