发明名称 |
Honeycomb structure and manufacturing method of the same |
摘要 |
There is provided a honeycomb structure including a honeycomb base material including a porous partition wall parent material; plugged portions; and a porous collecting layer disposed on the surface of the partition wall parent material in the remaining cells. A melting point of a material constituting the collecting layer is higher than that of a material constituting the partition wall parent material, a pore surface area per unit volume of the collecting layer is 2.0 times or more a pore surface area per unit volume of the partition wall parent material, and a thickness of a portion of the collecting layer which penetrates into pores of the partition wall parent material is 6% or smaller of that of each of partition walls including the partition wall parent material and the collecting layer. |
申请公布号 |
US8814975(B2) |
申请公布日期 |
2014.08.26 |
申请号 |
US201213424722 |
申请日期 |
2012.03.20 |
申请人 |
NGK Insulators, Ltd. |
发明人 |
Kikuchi Yoshio |
分类号 |
B01D50/00;B01D24/00;B01D39/14;B01D39/20;B01D39/06;C04B38/00;B28B11/00;B01D46/24;C04B111/00 |
主分类号 |
B01D50/00 |
代理机构 |
Burr & Brown, PLLC |
代理人 |
Burr & Brown, PLLC |
主权项 |
1. A honeycomb structure comprising:
a honeycomb base material including a porous partition wall parent material to partition and form a plurality of cells which become through channels of a fluid;
plugged portions arranged in open frontal areas of predetermined cells in an end surface on an inflow side of the fluid and open frontal areas of the remaining cells in an end surface on an outflow side of the fluid; anda porous collecting layer disposed on the surface of the partition wall parent material in the remaining cells,wherein a melting point of a material constituting the collecting layer is higher than that of a material constituting the partition wall parent material,a pore surface area per unit volume of the collecting layer is 2.0 times or more a pore surface area per unit volume of the partition wall parent material,wherein a thickness of the partition wall parent material is from 100 μm to 350 μm,wherein a thickness of the collecting layer formed on the partition wall parent material is from 5 to 17% of that of the sum of the thickness of the partition wall parent material and the thickness of the collecting layer disposed on the partition wall parent material,a thickness of a portion of the collecting layer which penetrates into pores of the partition wall parent material is 0.1% or larger and 3% or smaller of that of each of partition walls including the partition wall parent material and the collecting layer, andwherein the collecting layer is formed by coating the partition wall parent material in an unfired state with a raw material that forms the collecting layer, and then firing. |
地址 |
Nagoya JP |