| 发明名称 | Method of forming a germanium thin film | ||
| 摘要 | A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas. | ||
| 申请公布号 | US8815714(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US201313780842 | 申请日期 | 2013.02.28 |
| 申请人 | Tokyo Electron Limited | 发明人 | Kakimoto Akinobu;Nakajima Shigeru;Hasebe Kazuhide |
| 分类号 | H01L21/02 | 主分类号 | H01L21/02 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method of forming a germanium thin film on an underlying film, the method comprising: forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas; and forming a germanium thin film on the germanium seed layer using a germane-based gas. | ||
| 地址 | Tokyo JP | ||