发明名称 Interconnect Joint Protective Layer Apparatus and Method
摘要 Disclosed herein is a mechanism for forming an interconnect comprising forming a connector on an interconnect disposed on a first surface of a first substrate and applying a nonconductive material in a non-liquid form over the interconnect after forming the connector. The nonconductive material covers at least a lower portion of the interconnect, and at least a portion of the interconnect is exposed. The nonconductive material is formed around the connector by pressing the nonconductive material over the connector with a roller. An angle between a top surface of the nonconductive material and a connector sidewall between about 65 degrees and about 135 degrees. The nonconductive material may be formed to extend under the connector.
申请公布号 US2014231125(A1) 申请公布日期 2014.08.21
申请号 US201313913599 申请日期 2013.06.10
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Cheng-Ting;Kuo Hsuan-Ting;Chen Hsien-Wei;Lu Wen-Hsiung;Cheng Ming-Da;Liu Chung-Shi
分类号 H05K1/11;H05K3/40 主分类号 H05K1/11
代理机构 代理人
主权项 1. A method of forming an interconnect, comprising: forming an connector on an interconnect disposed on a first surface of a first substrate, the connector comprising a conductive material; and applying a nonconductive material in a non-liquid form over the interconnect after forming the connector, the nonconductive material covering at least a lower portion of the interconnect, at least a portion of the interconnect being exposed.
地址 Hsin-Chu TW