发明名称 |
Interconnect Joint Protective Layer Apparatus and Method |
摘要 |
Disclosed herein is a mechanism for forming an interconnect comprising forming a connector on an interconnect disposed on a first surface of a first substrate and applying a nonconductive material in a non-liquid form over the interconnect after forming the connector. The nonconductive material covers at least a lower portion of the interconnect, and at least a portion of the interconnect is exposed. The nonconductive material is formed around the connector by pressing the nonconductive material over the connector with a roller. An angle between a top surface of the nonconductive material and a connector sidewall between about 65 degrees and about 135 degrees. The nonconductive material may be formed to extend under the connector. |
申请公布号 |
US2014231125(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201313913599 |
申请日期 |
2013.06.10 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Cheng-Ting;Kuo Hsuan-Ting;Chen Hsien-Wei;Lu Wen-Hsiung;Cheng Ming-Da;Liu Chung-Shi |
分类号 |
H05K1/11;H05K3/40 |
主分类号 |
H05K1/11 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming an interconnect, comprising:
forming an connector on an interconnect disposed on a first surface of a first substrate, the connector comprising a conductive material; and applying a nonconductive material in a non-liquid form over the interconnect after forming the connector, the nonconductive material covering at least a lower portion of the interconnect, at least a portion of the interconnect being exposed. |
地址 |
Hsin-Chu TW |