| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion beam device which can form a pyramid structure of nanometer order, by reducing impurity gas being discharged from the lowest temperature part of a gas ionization chamber, when placing the emitter tip of a gas field ionization ion source under high temperature heating.SOLUTION: In a gas field ionization ion source having a cooling mechanism 60 for cooling an emitter tip 1, a temperature rise mechanism 62 for raising the temperature at the lowest temperature part in a gas ionization chamber 6 is provided. Prior to formation of a pyramid structure of nanometer order by heating the emitter tip to a high temperature, impurity gas is discharged while raising the temperature at the lowest temperature part above 5 K by means of the temperature rise mechanism, and then discharged to the outside by means of an ion source evacuation pump 9. When forming the pyramid structure, temperature at the lowest temperature part rises due to the heat transmitted from the emitter tip that has been heated to a high temperature, but since only a trace of impurity gas is discharged from the lowest temperature part, formation of the pyramid structure is not inhibited. |
