发明名称 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY STRUCTURE HAVING AN ANTIFUSE COMPONENT
摘要 An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process.
申请公布号 US2014225178(A1) 申请公布日期 2014.08.14
申请号 US201414258260 申请日期 2014.04.22
申请人 Semiconductor Components Industries, LLC 发明人 AGAM Moshe;YAO Thierry Coffi Herve;LIU Skip Shizhen
分类号 H01L23/525;H01L29/78 主分类号 H01L23/525
代理机构 代理人
主权项 1. An electronic device including a nonvolatile memory cell, wherein the nonvolatile memory cell comprises: a substrate; an access transistor having source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer; a read transistor having source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer; and an antifuse component including a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer, wherein the second electrode of the antifuse component is coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor.
地址 Phoenix AZ US