| 摘要 |
The present invention relates to a thin film transistor substrate capable of adjusting permeability by forming the width of bent portions of R, G, and B sub pixels and a method for manufacturing the same. The thin film transistor substrate of the present invention comprises a plurality of R, G, and B sub pixels arranged in a matrix form on a substrate, wherein each of the sub pixels has a first slope for the upper portion and the lower portion to be symmetry relative to the central portion. Each sub pixel includes a bent portion protruding to have a second slope greater than the first slope at the central portion, wherein the width of the bent portion is different for each of the R, G, and B sub pixels. |
