发明名称 MEMORY DEVICE, MEMORY SYSTEM AND CONTROL METHOD OF THE SAME
摘要 Disclosed are a memory device, a memory system, and a control method thereof. The control method comprises a step for enabling a first functional block of the memory system to generate a main request which comprises a first sub request for a first operation requested from the outside and a second sub request for a second operation dependent on the processing result of the first operation; a step for processing the first sub request or the second sub request for a second functional block of the memory system; and a step for enabling a third functional block of the memory system to transmit stop information to the first functional block in response to the main request regardless of the process of the second sub request when the processing result of the first sub request in the second functional block is fail.
申请公布号 KR20140096665(A) 申请公布日期 2014.08.06
申请号 KR20130009508 申请日期 2013.01.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YOUN WON;LEE, SU RYUN;LEE, BYUNG KI;LEE, SANG CHEOL
分类号 G11C7/10;G11C16/10;G11C16/34 主分类号 G11C7/10
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