| 摘要 |
PROBLEM TO BE SOLVED: To provide a semicondutor apparatus which can reduce power dissipation and to provide a method for manucfacturing the same. SOLUTION: The MISFET 10 is provided with a p-type substrate 1 having a channel region 20 of impurity concentration C, an SiO<SB>2</SB>insulation film 11 formed on the channel region 20, and an HfSiON insulation film 12 formed on the insulation film 11. Assuming another MISFET which is provided with a substrate having impurity concentration C and composed of the same material as that of the substrate 1, and an insulation film composed of SiON only formed on the channel region; the impurity concentration C of the channel region 20 is so established that the maximum of electron mobility in the channel 20 region is higher than the maximum of electron mobility in the channel region. COPYRIGHT: (C)2007,JPO&INPIT
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