发明名称 Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon
摘要 One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
申请公布号 US8793853(B2) 申请公布日期 2014.08.05
申请号 US201013502015 申请日期 2010.07.27
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Netsu Shigeyoshi;Kurotani Shinichi;Oguro Kyoji;Kume Fumitaka
分类号 B25B1/00 主分类号 B25B1/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A core wire holder, comprising: a thermal insulating portion provided between one end and the other end of the core wire holder, wherein an opening of a hollow portion into which a silicon core wire can be inserted is provided in the one end, and the other end is a contact portion with a metal electrode for flowing a current to the silicon core wire, wherein the core wire holder is a carbon electrode made of graphite.
地址 Tokyo JP