| 摘要 |
<p>[Solution] Provided is a negative pattern forming method which includes the steps of applying a resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent, and an optional acid generator onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film in an organic solvent-based developer to form the negative pattern wherein the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved, the polymer including recurring units (a1) of the general formula (1). (R1 is H or CH3, R2 is a monovalent hydrocarbon group in which a constituent -CH2- may be substituted by -O- or -C(=O)-, R3 is an acid labile group, R4is hydrogen or a monovalent hydrocarbon group in which a constituent -CH2- may be substituted by -O- or -C(=O)-, and 0<a1<1.0) [Effect] In a lithography process involving exposure, PEB and organic solvent development, a resist composition displays a high dissolution contrast, so that a fine hole or trench pattern can be formed at a high degree of size control and a high sensitivity.</p> |
