发明名称 |
A STRIP-SHAPED GATE-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND A PREPARATION METHOD THEREOF |
摘要 |
The present invention discloses a strip-shaped gate-modulated tunneling field effect transistor and a preparation method thereof, belonging to a field of field effect transistor logic device and the circuit in CMOS ultra large scale integrated circuit (ULSI). The tunneling field effect transistor includes a control gate, a gate dielectric layer, a semiconductor substrate, a highly-doped source region and a highly-doped drain region, where the highly-doped source region and the highly-doped drain region lie on both sides of the control gate, respectively, the control gate has a strip-shaped structure with a gate length greater than a gate width, and at one side thereof is connected to the highly-doped drain region and at the other side thereof extends laterally into the highly-doped source region; a region located below the control gate is a channel region; and the gate width of the control gate is less than twice width of a source depletion layer. The device modulates the source-side tunneling junction by using the strip-shaped gate structure, achieves the effect equivalent to that the source junction has a steep doping concentration gradient, and improves the TFET device performance; and the preparation method thereof is simple. |
申请公布号 |
US2014203324(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201314130631 |
申请日期 |
2013.07.08 |
申请人 |
Peking University |
发明人 |
Huang Ru;Huang Qianqian;Qiu Yingxin;Zhan Zhan;Wang Yangyuan |
分类号 |
H01L29/78;H01L29/08;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A tunneling field effect transistor, comprising a semiconductor substrate, a highly-doped source region, a highly-doped drain region, a gate dielectric layer, and a control gate, where the highly-doped source region and the highly-doped drain region lie on both sides of the control gate, respectively, wherein, the control gate has a strip-shaped structure with a gate length greater than a gate width, and at one side thereof is connected to the highly-doped drain region and at the other side thereof extends laterally into the highly-doped source region; a region located below the control gate is a channel region; and the gate width of the control gate is less than twice width of a source depletion layer. |
地址 |
Beijing CN |