| 摘要 |
The present disclosure relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers which are successively grown by using a growth substrate and include a first semiconductor layer which has a first conductivity, a second semiconductor layer which has a second conductivity which is different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by the recombination of an electron and a hole; a contact region which exposes the first semiconductor layer by partially removing the second semiconductor layer and the active layer; and a nonconductive reflection layer which is formed on the second semiconductor layer to reflect the light from the active layer toward the first semiconductor layer which is a growth substrate side. The region of the first semiconductor layer except the contact region is covered with the active layer and the second semiconductor layer. |
