| 摘要 |
The invention relates to an optoelectronic device comprising light-emitting means taking the form of nanowires (1, 7) having a core/shell structure and produced on a substrate (11), said nanowires comprising an active zone (12, 72) comprising at least two types of quantum wells associated with different emission wavelengths and arranged in at least two different regions (120, 121; 720, 721, 722) of said active zone, a first region (120, 720) of the active zone (12, 72) of the nanowires (1, 7) being a peripheral and substantially vertical part at least partially encircling the core (10, 70) of the nanowires and comprising radial quantum wells, and a second region (121, 721) of this active zone being an upper and substantially horizontal part located on the end of the core of the nanowires, with axial quantum wells, the device furthermore comprising a first electrical contact zone (15) on the substrate and a second electrical contact zone (16, 51; 17, 81) on the emitting means, the second zone being arranged such that, the emitting means being arranged in at least two sets, the electrical contact is made for each of said at least two sets at least in a different region of the active zone and via a continuous conductive layer, the electrical supply of power being controlled so as to obtain a multi-wavelength light emission. |
