| 发明名称 |
METHOD AND APPARATUS FOR FORMING SILICON FILM |
| 摘要 |
A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided. |
| 申请公布号 |
US2014199824(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414156097 |
申请日期 |
2014.01.15 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOMORI Katsuhiko |
| 分类号 |
H01L21/02;H01L21/67 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method comprising:
forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings. |
| 地址 |
Tokyo JP |
