| 摘要 |
Provided is a ceramic wiring substrate comprising a vertical conducting body which is formed by forming a vertical conducting hole in a substrate after the substrate is formed in a plate shape by sintering a ceramic precursor, forming a porous structure made of a metal with a high melting point in the vertical conducting hole, and infiltrating a low-resistance metal into the hole. The vertical conducting body has a normal composite structure with no abnormal grain growth, voids, cracks, or the like, and has no possibility of sloughing from the substrate. Also provided are a method for manufacturing the ceramic wiring substrate, and a semiconductor device configured using the ceramic wiring substrate. On the inner surface of the vertical conducting hole (2) of the substrate (3) before the vertical conducting body (4) having the composite structure is formed, an intermediate layer (5) comprising at least one from among the group consisting of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru, and Hf is formed. |
