| 发明名称 |
METHOD OF FORMING SILICON FILM AND FILM FORMING APPARATUS |
| 摘要 |
Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms. |
| 申请公布号 |
US2014187025(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201314141620 |
申请日期 |
2013.12.27 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OBU Tomoyuki;MIYAHARA Takahiro;NAGATA Tomoyuki |
| 分类号 |
H01L21/02;C23C16/24;H01L29/04 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a film including a silicon film on a base, comprising:
forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the heated base surface; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms. |
| 地址 |
Tokyo JP |
