| 发明名称 |
MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE |
| 摘要 |
A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. |
| 申请公布号 |
US2014183438(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201414201376 |
申请日期 |
2014.03.07 |
| 申请人 |
Sony Corporation |
发明人 |
Ohba Kazuhiro;Yasuda Shuichiro;Mizuguchi Tetsuya;Aratani Katsuhisa;Shimuta Masayuki;Kouchiyama Akira;Ogasawara Mayumi |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A memory device comprising:
a first electrode; a second electrode; and a memory layer between the first and second electrodes, wherein,
the memory layer includes (a) a first memory layer containing aluminum (Al) and a chalcogen element, and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide, andthe first memory layer has a resistance lower than the resistance value of the second memory layer. |
| 地址 |
Tokyo JP |
