| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve high reliability by increasing a dielectric strength voltage of a gate insulation film.SOLUTION: A semiconductor device comprises: an oxide semiconductor film on an insulation surface; a pair of first conductive films on the oxide semiconductor film; first through insulation films which are sequentially stacked on the oxide film and the pair of conductive films; and a second conductive film which overlaps the oxide semiconductor film on the first through third insulation films. The first insulation film and the third insulation film contain a silicon oxide, a silicon nitride, a silicon oxynitride, a silicon nitroxide, an aluminum oxide or an aluminum oxynitride. The second insulation film contains a gallium oxide, a zirconium oxide or a hafnium oxide. |
