SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor device (1) has a silicon carbide substrate (10), a gate insulating film (15) and a gate electrode (27). The silicon carbide substrate (10) comprises a first impurity region (17) that has a first conductivity type, a well region (13) that is in contact with the first impurity region (17) and has a second conductivity type that is different from the first conductivity type, and a second impurity region (14) that is separated from the first impurity region (17) by means of the well region (13) and has the first conductivity type. The gate insulating film (15) is in contact with the first impurity region (17) and the well region (13). The gate electrode (27) is in contact with the gate insulating film (15) and is arranged opposite to the well region (13) with respect to the gate insulating film (15). The characteristic on-resistance at a voltage that is half the gate drive voltage applied to the gate electrode (27) is lower than twice the characteristic on-resistance at the gate drive voltage. Consequently, there can be provided a silicon carbide semiconductor device (1) which has improved switching characteristics.