发明名称 |
Integrated Circuits With Non-Volatile Memory and Methods for Manufacture |
摘要 |
Semiconductor devices and the manufacture of such semiconductor devices are described. According to various aspects of the disclosure, a semiconductor device can include a memory region, a first logic region, and a second logic region. A select gate can be formed in the memory region of the device and a first logic gate formed in the logic region. A charge trapping dielectric can then be disposed and removed from a second logic region. A gate conductor layer can then be disposed on the device and etched to define a memory gate on the sidewall of the select gate and a second logic gate in the second logic region. |
申请公布号 |
US2014167139(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201213715565 |
申请日期 |
2012.12.14 |
申请人 |
SPANSION LLC |
发明人 |
CHANG Kuo Tung;CHEN Chun;FANG Shenqing |
分类号 |
H01L29/40;H01L29/423 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device that includes a first region, a second region, and a third region, comprising:
forming a select gate in the first region; forming a first logic gate in the second region; disposing a charge trapping dielectric; removing the charge trapping dielectric from the third region; disposing a gate conductor layer; and etching the gate conductor layer to define a memory gate on a sidewall of the select gate and a second logic gate in the third region.
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地址 |
Sunnyvale CA US |