发明名称 |
THIN FILM STRUCTURES AND DEVICES WITH INTEGRATED LIGHT AND HEAT BLOCKING LAYERS FOR LASER PATTERNING |
摘要 |
Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning. |
申请公布号 |
EP2742524(A2) |
申请公布日期 |
2014.06.18 |
申请号 |
EP20120821858 |
申请日期 |
2012.08.08 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SONG, DAOYING;JIANG, CHONG;KWAK, BYUNG, SUNG LEO;GORDON, JOSEPH, G. |
分类号 |
H01L21/301;H01L31/18;H01M10/04 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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