NANOWIRE FIELD-EFFECT SENSORS HAVING A 3-DIMENSIONAL STACKED NANOWIRE AND THE MANUFACTURING METHOD

摘要

The purpose of the present invention is to provide a nanowire sensor with nanowires capable of improving measurement sensitivity by increasing probability of attaching a target object to nanowires by being formed in a three-dimensional structure by stacking the nanowires to have a wider area of an exposed surface than that of a straight nanowire sensor. The nanowire sensor can have increased sensitivity of the sensor by further sensitively detecting a change in conductance or resistance of the nanowires. Also, in an upper part of the nanowires, when a medium is charged in the lower part as well as an upper part and a side part of the nanowire, the operation of an element becomes Gate-all-around (GAA) to improve the gate controlling performance of the nanowires, thereby increasing sensitivity. Further, the nanowires with high conductance caused by the nanowires arranged in parallel affect the conductance of the entire element, and the lighting characteristic of an element is affected by the excellent nanowires of the nanowires connected in parallel, thereby averagely increasing the lighting characteristic of an element.