发明名称 METHOD FOR PRODUCING GRAPHENE, AND GRAPHENE PRODUCED BY THE METHOD
摘要 A method for producing grapheme is disclosed in which graphene is formed by supplying carbon to a heated transition metal surface, in order to form a high-quality uniform graphene film having no domain boundaries. The method includes forming a buffer thin film that is epitaxially grown on a Ni(111) substrate, and forming graphene on the buffer thin film. The buffer thin film is made of material selected from the group consisting of Fe, Co, Ni, Cu, Mo, Ru, Rh, Pd, W, Re, Ir and Pt, or from alloys thereof. The buffer thin film has a surface of three-fold symmetry or six-fold symmetry.
申请公布号 US2014162021(A1) 申请公布日期 2014.06.12
申请号 US201414178570 申请日期 2014.02.12
申请人 FUJI ELECTRIC CO., LTD. 发明人 FUJII Takeshi;SATO Mariko
分类号 C30B25/18;C30B29/02;C30B29/68 主分类号 C30B25/18
代理机构 代理人
主权项 1. A method for producing graphene in which graphene is formed by supplying carbon to a heated transition metal surface, the method comprising: providing a Ni(111) substrate; epitaxially growing a buffer thin film on the Ni(111) substrate, and forming graphene on the buffer thin film.
地址 Kawasaki-shi JP