Re-silicide gate electrode for III-N device on Si substrate

摘要

A method of fabricating a rare earth silicide gate electrode on III-N material grown on a silicon substrate includes growing a single crystal stress compensating template on a silicon substrate. The template is substantially crystal lattice matched to the surface of the silicon substrate. A single crystal GaN structure is grown on the surface of the template and substantially crystal lattice matched to the template. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched to the GaN structure. A single crystal monoclinic rare earth oxide dielectric layer is grown on the active layer of III-N material and a single crystal rare earth silicide gate electrode is grown on the dielectric layer, the silicide. Relative portions of the gadolinium metal and the silicon are adjusted during deposition so they react to form rare earth silicide during deposition.

主权项

1. A method of fabricating a rare earth silicide gate electrode on III-N material grown on a silicon substrate comprising the steps of:
providing a single crystal silicon substrate; growing or depositing a single crystal stress compensating template on the silicon substrate, the stress compensating template being substantially crystal lattice matched to the surface of the silicon substrate; growing or depositing a single crystal GaN structure on the surface of the stress compensating template, the GaN structure being substantially crystal lattice matched to the single crystal stress compensating template; growing or depositing an active layer of single crystal III-N material on the GaN structure, the single crystal III-N material being substantially crystal lattice matched to the GaN structure; growing or depositing a single crystal monoclinic rare earth oxide dielectric layer on the active layer of III-N material; and growing or depositing a single crystal rare earth silicide gate electrode on the dielectric layer.