发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits the occurrence of warpage when a thermosetting resin sheet is thermally cured after a plurality of semiconductor chips are buried in the thermosetting resin sheet.SOLUTION: The semiconductor device manufacturing method comprises: a process A of preparing a first laminate in which a first adhesive layer 24 is provided on a first base 22, a second laminate in which a second adhesive layer 34 is provided on a second base 32 and a third laminate which is provided between a surface of the first laminate on the first adhesive layer 24 side and a surface of the second laminate on the second adhesive layer 34 side and in which thermosetting resin sheets 40 in each of which a plurality of semiconductor chips 26 are buried are laminated; a process B of thermally curing the thermosetting resin sheets 40 of the third laminate; a process C of peeling the first laminate after thermally curing the thermosetting resin sheets 40 by using a bonded surface of the thermosetting resin sheets 40 and the first adhesive layer 24 of the first laminate as a boundary surface; and a process D of forming wiring on the thermosetting resin sheets 40 after peeling the first laminate.
申请公布号 JP2014107392(A) 申请公布日期 2014.06.09
申请号 JP20120258748 申请日期 2012.11.27
申请人 NITTO DENKO CORP 发明人 ISHII ATSUSHI;UENDA DAISUKE;TOYODA HIDESHI;SUZUKI AKIRA
分类号 H01L25/04;H01L23/52;H01L25/18 主分类号 H01L25/04
代理机构 代理人
主权项
地址