发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits the occurrence of warpage when a thermosetting resin sheet is thermally cured after a plurality of semiconductor chips are buried in the thermosetting resin sheet.SOLUTION: The semiconductor device manufacturing method comprises: a process A of preparing a first laminate in which a first adhesive layer 24 is provided on a first base 22, a second laminate in which a second adhesive layer 34 is provided on a second base 32 and a third laminate which is provided between a surface of the first laminate on the first adhesive layer 24 side and a surface of the second laminate on the second adhesive layer 34 side and in which thermosetting resin sheets 40 in each of which a plurality of semiconductor chips 26 are buried are laminated; a process B of thermally curing the thermosetting resin sheets 40 of the third laminate; a process C of peeling the first laminate after thermally curing the thermosetting resin sheets 40 by using a bonded surface of the thermosetting resin sheets 40 and the first adhesive layer 24 of the first laminate as a boundary surface; and a process D of forming wiring on the thermosetting resin sheets 40 after peeling the first laminate. |
申请公布号 |
JP2014107392(A) |
申请公布日期 |
2014.06.09 |
申请号 |
JP20120258748 |
申请日期 |
2012.11.27 |
申请人 |
NITTO DENKO CORP |
发明人 |
ISHII ATSUSHI;UENDA DAISUKE;TOYODA HIDESHI;SUZUKI AKIRA |
分类号 |
H01L25/04;H01L23/52;H01L25/18 |
主分类号 |
H01L25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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