发明名称 Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory Cells
摘要 Provided are methods for processing different materials on the same substrate for high throughput screening of multiple ReRAM materials. A substrate may be divided into multiple site isolated regions, each region including one or more base structures operable as bottom electrodes of ReRAM cells. Different test samples may be formed over these base structures in a combinatorial manner. Specifically, each site isolated region may receive a test sample that has a different characteristic than at least one other sample provided in another region. The test samples may have different compositions and/or thicknesses or be deposited using different techniques. These different samples are then etched in the same operation to form portions of the samples. Each portion is substantially larger than the corresponding base structure and fully covers this base structure to protect the interface between the base structure and the portion during etching.
申请公布号 US2014154859(A1) 申请公布日期 2014.06.05
申请号 US201213705516 申请日期 2012.12.05
申请人 INTERMOLECULAR INC. 发明人 Gopal Vidyut;Chiang Tony P.;Hashim Imran;Higuchi Randall J.;Huertas Robert A.;Pham Hieu;Wang Yun
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A method comprising: providing a substrate comprising a plurality of site isolated regions, each site isolated region comprises at least one base structure comprising a conductive material,wherein each base structure is connected to a separate connector structure for connecting to an electrical lead of a test probe; forming test samples over the base structures in each of the site isolated regions, the test samples formed in a combinatorial manner such that each site isolated region receives one test sample having a different characteristic than at least one test sample of another site isolated region, the test samples comprising dielectric materials,each test sample forming an interface layer with one of the base structures; and etching the test samples in the same operation while each test sample protects the interface formed with the one of the base structures during etching, wherein etching forms test sample portions from the test samples,each test sample portion fully covering a base structure provided under this test sample portion.
地址 San Jose CA US