发明名称 |
METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE |
摘要 |
A semiconductor structure includes a III-nitride substrate and a first III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The semiconductor structure also includes a first III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial layer and a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure. The semiconductor structure further includes a second III-nitride epitaxial layer coupled to the first III-nitride epitaxial structure. The second III-nitride epitaxial layer is of a second conductivity type and is not electrically connected to the second III-nitride epitaxial structure. |
申请公布号 |
US2014145201(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201213689574 |
申请日期 |
2012.11.29 |
申请人 |
AVOGY, INC. |
发明人 |
NIE HUI;EDWARDS ANDREW P.;BOUR DAVID P.;KIZILYALLI ISIK C.;BROWN RICHARD J.;PRUNTY THOMAS R. |
分类号 |
H01L29/78;H01L21/36;H01L29/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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