IN NANO WIRE, ELEMENT USING THE SAME AND METHOD OF MANUFACTURING FOR IN NANO WIRE
摘要
<p>The present invention provides an indium nano wire including a substrate; an indium foil formed on the substrate; an insulating layer having at least one penetration hole by the pattern formation; an indium nano wire perpendicularly protruded from the indium through the penetration hole.</p>
申请公布号
KR20140064374(A)
申请公布日期
2014.05.28
申请号
KR20120131645
申请日期
2012.11.20
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
CHUNG, HEE SUK;KIM, GYU SEOK;KANG, HAN WOOL;LEE, KYUNG HO;KIM, MI YANG;HAM, SUK JIN
