| 摘要 |
The present invention relates to an integrated semiconductor circuit, and more specifically, to a semiconductor memory device. The semiconductor memory device according to an embodiment of the present invention include: a bank; a temperature sensor which generates a temperature voltage which varies in the voltage level according to the change in the temperature of the bank; and a timing control unit which controls the timing of the signal entered to the bank according to the voltage level; of the temperature voltage. |
