| 摘要 |
<p>To take advantage of the properties of a display device using an oxide semiconductor, a protection circuit with a proper configuration and a small occupied area is necessary. A protection circuit is formed by using a nonlinear element which includes a gate insulation layer which covers a gate electrode, a first oxide semiconductor layer which is formed on the gate insulation layer, a channel protection layer which covers an overlap area with the channel forming region of the first oxide semiconductor layer, and a first wiring layer and a second wiring layer which are located on the first oxide semiconductor layer and are formed by stacking a conductive layer and a second oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line. The first wiring layer or the second wiring layer is directly connected to the gate electrode.</p> |
