发明名称 Jog Design in Integrated Circuits
摘要 A device includes an active region in a semiconductor substrate, a gate strip over and crossing the active region, and a jog over the active region and connected to the gate strip to form a continuous region. The jog is on a side of the gate strip. A first contact plug is at a same level as the gate strip, wherein the first contact plug is on the side of the gate strip. A second contact plug is over the jog and the first contact plug. The second contact plug electrically interconnects the first contact plug and the jog.
申请公布号 US2014138750(A1) 申请公布日期 2014.05.22
申请号 US201213679238 申请日期 2012.11.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WU TSUNG-LIN;HSIEH TUNG-HENG;KUO JIUN-MING;CHIANG MIN-HSIUNG;CHE CHE-YUAN
分类号 H01L29/78;H01L29/66 主分类号 H01L29/78
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